Photogated transistor of III-nitride nanorods
H. W. Seo, L. W. Tu, Q. Y. Chen, C. Y. Ho, Y. T. Lin et al.
A III-nitride-based photogated transistor using photons to control the channel width of an otherwise gateless field effect transistor (FET) is investigated. This is accomplished by stacking sequential layers of p-GaN/InGaN/n-GaN on a Si substrate in an array of nanorods. The nitride p-i-n diode can … [Appl. Phys. Lett. 96, 101114 (2010)] published Thu Mar 11, 2010.