1.55 mu m ultrafast photoconductive switches based on ErAs:InGaAs
F. Ospald, D. Maryenko, K. von Klitzing, D. C. Driscoll, M. P. Hanson et al.
The electron capture time in superlattice structures consisting of periodically spaced layers of self-assembled ErAs nanoislands and InGaAs is investigated on photoconductive switches as a function of the superlattice period using photocurrent autocorrelation and pulsed laser excitation at 1.55 [mu ... [Appl. Phys. Lett. 92, 131117 (2008)] published Thu Apr 3, 2008.
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The electron capture time in superlattice structures consisting of periodically spaced layers of self-assembled ErAs nanoislands and InGaAs is investigated on photoconductive switches as a function of the superlattice period using photocurrent autocorrelation and pulsed laser excitation at 1.55 [mu ... [Appl. Phys. Lett. 92, 131117 (2008)] published Thu Apr 3, 2008.
Read full Article »
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