200 mW type I GaSb-based laser diodes operating at 3 [mu]m: Role of waveguide width
Takashi Hosoda, Gela Kipshidze, Leon Shterengas, Sergey Suchalkin, and Gregory Belenky
Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the waveguide width from 1470 to 470 nm led to the improvement of the device performance. Lasers with 470 nm quinternary waveguides demonstrated 200 mW continuous ... [Appl. Phys. Lett. 94, 261104 (2009)] published Mon Jun 29, 2009.
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Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the waveguide width from 1470 to 470 nm led to the improvement of the device performance. Lasers with 470 nm quinternary waveguides demonstrated 200 mW continuous ... [Appl. Phys. Lett. 94, 261104 (2009)] published Mon Jun 29, 2009.
Read full Article »
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