Archive for February 2009
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The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
Di Zhu, Jiuru Xu, Ahmed N. Noemaun, Jong Kyu Kim, E. Fred Schubert et al.
We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is s … [Appl. Phys. Lett. 94, 081113 (2009)] published Wed Feb 25, 2009.
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