Archive for October 2009
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Influence of GeSi interfacial layer on GeGe optical phonon mode in SiO films embedded with Ge nanocrystals
L. Z. Liu, F. Gao, X. L. Wu, T. H. Li, and Paul K. Chu
The GeGe optical phonon peak at 300 cm acquired from amorphous SiO films embedded with Ge nanocrystals by Raman scattering is sensitive to the Si content. When the Si concentration is high, a thin GeSi interfacial layer forms around the Ge nanocrystals. A tensile stress is produced to partially off … [Appl. Phys. Lett. 95, 171105 (2009)] published Wed Oct 28, 2009.
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