Archive for February 2010
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You are browsing the archives of 2010 February.
R. Faulks, S. Rihani, H. E. Beere, M. J. Evans, D. A. Ritchie et al.
We present a terahertz (THz) photoconductive emitter structure, which employs a n-doped layer underneath a low-temperature-grown GaAs region to enable the THz transient to couple vertically through a defined mesa. A nonlinear bias dependence is observed, yielding an order in magnitude improvement in … [Appl. Phys. Lett. 96, 081106 (2010)] published Mon Feb 22, 2010.