500 nm electrically driven InGaN based laser diodes
Desiree Queren, Adrian Avramescu, Georg Bruderl, Andreas Breidenassel, Marc Schillgalies et al.
Based on recent improvements of growth of In-rich InGaN quantum wells with low defect density, we demonstrate current driven InGaN laser diodes at wavelengths as long as 500 nm. The laser structures are grown on c-plane GaN substrate and are processed as broad oxide-insulated stripe laser diodes. We ... [Appl. Phys. Lett. 94, 081119 (2009)] published Fri Feb 27, 2009.
Based on recent improvements of growth of In-rich InGaN quantum wells with low defect density, we demonstrate current driven InGaN laser diodes at wavelengths as long as 500 nm. The laser structures are grown on c-plane GaN substrate and are processed as broad oxide-insulated stripe laser diodes. We ... [Appl. Phys. Lett. 94, 081119 (2009)] published Fri Feb 27, 2009.