A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
C. Bayram, F. Hosseini Teherani, D. J. Rogers, and M. Razeghi
Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers. X-ray diffraction revealed that high crystallogr ... [Appl. Phys. Lett. 93, 081111 (2008)] published Wed Aug 27, 2008.
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Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers. X-ray diffraction revealed that high crystallogr ... [Appl. Phys. Lett. 93, 081111 (2008)] published Wed Aug 27, 2008.
Read full Article »
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