A pure 1.5 mu m electroluminescence from metal-oxide-silicon tunneling diode using dislocation network
X. Yu, W. Seifert, O. F. Vyvenko, M. Kittler, T. Wilhelm et al.
This letter has demonstrated a light emitting diode (LED) with a pure 1.5 [mu]m emission using a metal-oxide-silicon (MOS) tunneling structure based on dislocation network in direct silicon bond wafer. It is found that under negative gate bias, the electrons in the metal gate electrode tunnel throu ... [Appl. Phys. Lett. 93, 041108 (2008)] published Tue Jul 29, 2008.
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This letter has demonstrated a light emitting diode (LED) with a pure 1.5 [mu]m emission using a metal-oxide-silicon (MOS) tunneling structure based on dislocation network in direct silicon bond wafer. It is found that under negative gate bias, the electrons in the metal gate electrode tunnel throu ... [Appl. Phys. Lett. 93, 041108 (2008)] published Tue Jul 29, 2008.
Read full Article »
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