a-Si nanolayer induced enhancement of the 1.53 mu m photoluminescence in Er[sup 3+] doped a-Al[sub 2]O[sub 3] thin films
J. Toudert, S. Nunez-Sanchez, M. Jimenez de Castro, and R. Serna
A structured film formed by an active Er-doped amorphous AlO layer located between two amorphous silicon nanolayers (NLs) in as-grown conditions shows an enhancement of the photoluminescence (PL) intensity and lifetime at 1.53 [mu]m of one order of magnitude when compared to a similar Er-doped film ... [Appl. Phys. Lett. 92, 121111 (2008)] published Fri Mar 28, 2008.
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A structured film formed by an active Er-doped amorphous AlO layer located between two amorphous silicon nanolayers (NLs) in as-grown conditions shows an enhancement of the photoluminescence (PL) intensity and lifetime at 1.53 [mu]m of one order of magnitude when compared to a similar Er-doped film ... [Appl. Phys. Lett. 92, 121111 (2008)] published Fri Mar 28, 2008.
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