All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip
Takasumi Tanabe, Hisashi Sumikura, Hideaki Taniyama, Akihiko Shinya, and Masaya Notomi
We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high-Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteri ... [Appl. Phys. Lett. 96, 101103 (2010)] published Mon Mar 8, 2010.
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We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high-Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteri ... [Appl. Phys. Lett. 96, 101103 (2010)] published Mon Mar 8, 2010.
Read full Article »
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