ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures
Jonathan Genest, Romain Beal, Vincent Aimez, and Jan J. Dubowski
Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generat ... [Appl. Phys. Lett. 93, 071106 (2008)] published Wed Aug 20, 2008.
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Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generat ... [Appl. Phys. Lett. 93, 071106 (2008)] published Wed Aug 20, 2008.
Read full Article »
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