Back-illuminated separate absorption and multiplication GaN avalanche photodiodes
J. L. Pau, C. Bayram, R. McClintock, M. Razeghi, and D. Silversmith
The performance of back-illuminated avalanche photodiodes with separate absorption and multiplication regions is presented. Devices with an active area of 225 [mu]m show a maximum multiplication gain of 41 200. The calculation of the noise equivalent power yields a minimum value of 3.3 x 10 W Hz ... [Appl. Phys. Lett. 92, 101120 (2008)] published Thu Mar 13, 2008.
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The performance of back-illuminated avalanche photodiodes with separate absorption and multiplication regions is presented. Devices with an active area of 225 [mu]m show a maximum multiplication gain of 41 200. The calculation of the noise equivalent power yields a minimum value of 3.3 x 10 W Hz ... [Appl. Phys. Lett. 92, 101120 (2008)] published Thu Mar 13, 2008.
Read full Article »
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