Barrier effect on hole transport and carrier distribution in InGaN/GaN multiple quantum well visible light-emitting diodes
J. P. Liu, J.-H. Ryou, R. D. Dupuis, J. Han, G. D. Shen et al.
Carrier distributions governed by hole transport in InGaN/GaN multiple quantum well (MQW) visible light-emitting diodes (LEDs) were investigated using conventional blue LEDs and dual-wavelength blue-green LEDs. It was found that holes were dominantly distributed in the QW close to the p-GaN layer in ... [Appl. Phys. Lett. 93, 021102 (2008)] published Mon Jul 14, 2008.
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Carrier distributions governed by hole transport in InGaN/GaN multiple quantum well (MQW) visible light-emitting diodes (LEDs) were investigated using conventional blue LEDs and dual-wavelength blue-green LEDs. It was found that holes were dominantly distributed in the QW close to the p-GaN layer in ... [Appl. Phys. Lett. 93, 021102 (2008)] published Mon Jul 14, 2008.
Read full Article »
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