Burn-in mechanism of 450 nm InGaN ridge laser test structures
Jens Muller, Georg Bruderl, Marc Schillgalies, Sonke Tautz, Dimitri Dini et al.
We investigated the short term stability of the optical output power of 450 nm InGaN test lasers. The short term degradation strongly depended on ridge width. It was mainly caused by an increase in threshold current. From measurements of subthreshold wave-length blueshift, carrier lifetime, and out ... [Appl. Phys. Lett. 95, 051104 (2009)] published Wed Aug 5, 2009.
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We investigated the short term stability of the optical output power of 450 nm InGaN test lasers. The short term degradation strongly depended on ridge width. It was mainly caused by an increase in threshold current. From measurements of subthreshold wave-length blueshift, carrier lifetime, and out ... [Appl. Phys. Lett. 95, 051104 (2009)] published Wed Aug 5, 2009.
Read full Article »
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