Characteristics of long wavelength InGaN quantum well laser diodes
K. S. Kim, J. K. Son, S. N. Lee, Y. J. Sung, H. S. Paek et al.
We demonstrated the long wavelength (485 nm) lasing of InGaN laser diodes under continuous wave condition at room temperature over 10 mW. Two InGaN laser structures were adapted with different indium composition for InGaN optical confinement layers (OCLs) below quantum wells. The blue shift of ele ... [Appl. Phys. Lett. 92, 101103 (2008)] published Mon Mar 10, 2008.
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We demonstrated the long wavelength (485 nm) lasing of InGaN laser diodes under continuous wave condition at room temperature over 10 mW. Two InGaN laser structures were adapted with different indium composition for InGaN optical confinement layers (OCLs) below quantum wells. The blue shift of ele ... [Appl. Phys. Lett. 92, 101103 (2008)] published Mon Mar 10, 2008.
Read full Article »
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