Characterization of a-plane InGaN multiple-quantum wells grown on maskless lateral epitaxially overgrown a-plane GaN
Sung-Nam Lee, H. S. Paek, H. Kim, Y. M. Park, T. Jang et al.
We investigated the properties of nonpolar a-plane InGaN/GaN multiple-quantum wells (MQWs) grown on maskless lateral epitaxial overgrowth (LEO) a-plane GaN/r-sapphire. Many surface defects with asymmetric V-shape were observed on a-plane InGaN MQWs grown on the defective regions which were seed and ... [Appl. Phys. Lett. 92, 111106 (2008)] published Wed Mar 19, 2008.
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We investigated the properties of nonpolar a-plane InGaN/GaN multiple-quantum wells (MQWs) grown on maskless lateral epitaxial overgrowth (LEO) a-plane GaN/r-sapphire. Many surface defects with asymmetric V-shape were observed on a-plane InGaN MQWs grown on the defective regions which were seed and ... [Appl. Phys. Lett. 92, 111106 (2008)] published Wed Mar 19, 2008.
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