Continuous wave operation of diode lasers at 3.36 mu m at 12 [degree]C
L. Shterengas, G. Belenky, T. Hosoda, G. Kipshidze, and S. Suchalkin
GaSb-based type-I quantum-well diode lasers emitting at 3.36 [mu]m at 12 degrees C with 15 mW of continuous wave output power are reported. Devices with two or four InGaAsSb compressively strained quantum wells and AlInGaAsSb quinternary barriers were fabricated and characterized. It was shown t ... [Appl. Phys. Lett. 93, 011103 (2008)] published Tue Jul 8, 2008.
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GaSb-based type-I quantum-well diode lasers emitting at 3.36 [mu]m at 12 degrees C with 15 mW of continuous wave output power are reported. Devices with two or four InGaAsSb compressively strained quantum wells and AlInGaAsSb quinternary barriers were fabricated and characterized. It was shown t ... [Appl. Phys. Lett. 93, 011103 (2008)] published Tue Jul 8, 2008.
Read full Article »
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