Continuous-wave room temperature operated 3.0 mu m type I GaSb-based lasers with quinternary AlInGaAsSb barriers
T. Hosoda, G. Belenky, L. Shterengas, G. Kipshidze, and M. V. Kisin
Diode lasers emitting at 3.0 [mu]m were designed and fabricated. Device active region contained two compressively strained InGaAsSb quantum wells incorporated in quinternary AlInGaAsSb barriers. Laser output power at room temperature was 130 mW in continuous wave regime and more than 1 W in pulse ... [Appl. Phys. Lett. 92, 091106 (2008)] published Tue Mar 4, 2008.
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Diode lasers emitting at 3.0 [mu]m were designed and fabricated. Device active region contained two compressively strained InGaAsSb quantum wells incorporated in quinternary AlInGaAsSb barriers. Laser output power at room temperature was 130 mW in continuous wave regime and more than 1 W in pulse ... [Appl. Phys. Lett. 92, 091106 (2008)] published Tue Mar 4, 2008.
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