Control of quantum-confined Stark effect in InGaN/GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes
J.-H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu et al.
We demonstrate the control of the quantum-confined Stark effect in InGaN/GaN quantum wells (QWs), grown along the [0001] direction as part of the active region of visible light emitting diodes (LEDs). The effect can be altered by modifying the strain applied to the active region by the hole injectio ... [Appl. Phys. Lett. 92, 101113 (2008)] published Tue Mar 11, 2008.
Read full Article »
We demonstrate the control of the quantum-confined Stark effect in InGaN/GaN quantum wells (QWs), grown along the [0001] direction as part of the active region of visible light emitting diodes (LEDs). The effect can be altered by modifying the strain applied to the active region by the hole injectio ... [Appl. Phys. Lett. 92, 101113 (2008)] published Tue Mar 11, 2008.
Read full Article »
Leave a Reply