Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys
N. Nepal, J. M. Zavada, D. S. Lee, A. J. Steckl, A. Sedhain et al.
The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped AlGaN (0.39<=x<=1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 an ... [Appl. Phys. Lett. 94, 111103 (2009)] published Mon Mar 16, 2009.
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The ultraviolet (UV) photoluminescence (PL) properties of Tm-doped AlGaN (0.39<=x<=1) alloys grown by solid-source molecular beam epitaxy were probed using above-bandgap excitation from a laser source at 197 nm. The PL spectra show dominant UV emissions at 298 and 358 nm only for samples with x=1 an ... [Appl. Phys. Lett. 94, 111103 (2009)] published Mon Mar 16, 2009.
Read full Article »
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