Degradation of InGaN/GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings
M. Rossetti, T. M. Smeeton, W.-S. Tan, M. Kauer, S. E. Hooper et al.
The degradation of InGaN/GaN laser diodes grown by molecular beam epitaxy is analyzed by using surface mapping of the photoluminescence emission on a micrometric scale, which allows the identification of failure regions. This, combined with the mapping of the electroluminescence, suggests two differ ... [Appl. Phys. Lett. 92, 151110 (2008)] published Thu Apr 17, 2008.
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The degradation of InGaN/GaN laser diodes grown by molecular beam epitaxy is analyzed by using surface mapping of the photoluminescence emission on a micrometric scale, which allows the identification of failure regions. This, combined with the mapping of the electroluminescence, suggests two differ ... [Appl. Phys. Lett. 92, 151110 (2008)] published Thu Apr 17, 2008.
Read full Article »
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