Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates
Josep Carreras, J. Arbiol, B. Garrido, C. Bonafos, and J. Montserrat
We propose a light emitting transistor based on silicon nanocrystals provided with 200 Mbits/s built-in modulation. Suppression of electroluminescence from silicon nanocrystals embedded into the gate oxide of a field effect transistor is achieved by fast Auger quenching. In this process, a modulati ... [Appl. Phys. Lett. 92, 091103 (2008)] published Mon Mar 3, 2008.
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We propose a light emitting transistor based on silicon nanocrystals provided with 200 Mbits/s built-in modulation. Suppression of electroluminescence from silicon nanocrystals embedded into the gate oxide of a field effect transistor is achieved by fast Auger quenching. In this process, a modulati ... [Appl. Phys. Lett. 92, 091103 (2008)] published Mon Mar 3, 2008.
Read full Article »
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