Directional and controllable edge-emitting ZnO ultraviolet random laser diodes
H. K. Liang, S. F. Yu, and H. Y. Yang
Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed i-ZnO:Al(3%)/n-ZnO:Al(5%) buried heterojunction diode with a 2 [mu]m rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried hete ... [Appl. Phys. Lett. 96, 101116 (2010)] published Fri Mar 12, 2010.
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Room-temperature ultraviolet random lasing action is demonstrated from a p-GaN/annealed i-ZnO:Al(3%)/n-ZnO:Al(5%) buried heterojunction diode with a 2 [mu]m rib waveguide. Excellent electrical-to-optical conversion efficiency is achieved by strong electrical and optical confinement of a buried hete ... [Appl. Phys. Lett. 96, 101116 (2010)] published Fri Mar 12, 2010.
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