Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation
N. Nepal, J. M. Zavada, D. S. Lee, and A. J. Steckl
We report on dynamics of ultraviolet (UV) emissions using above band gap excitation in Tm-doped AlN epilayers grown by solid-source molecular beam epitaxy. The UV and visible photoluminescence (PL) spectra were measured using the frequency quadrupled output from a Ti:sapphire laser. In the UV region ... [Appl. Phys. Lett. 93, 061110 (2008)] published Thu Aug 14, 2008.
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We report on dynamics of ultraviolet (UV) emissions using above band gap excitation in Tm-doped AlN epilayers grown by solid-source molecular beam epitaxy. The UV and visible photoluminescence (PL) spectra were measured using the frequency quadrupled output from a Ti:sapphire laser. In the UV region ... [Appl. Phys. Lett. 93, 061110 (2008)] published Thu Aug 14, 2008.
Read full Article »
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