Effect of efficiency droop in violet and blue InGaN laser diodes
S. Grzanka, P. Perlin, R. Czernecki, L. Marona, M. Bockowski et al.
We have studied two types of InGaN laser diodes emitting at 410 and 440 nm. Each device was characterized by measuring light-current characteristics in two geometries for which the light was collected: along the resonator and perpendicularly to the cavity. In the first configuration, the 410 nm devi ... [Appl. Phys. Lett. 95, 071108 (2009)] published Thu Aug 20, 2009.
Read full Article »
We have studied two types of InGaN laser diodes emitting at 410 and 440 nm. Each device was characterized by measuring light-current characteristics in two geometries for which the light was collected: along the resonator and perpendicularly to the cavity. In the first configuration, the 410 nm devi ... [Appl. Phys. Lett. 95, 071108 (2009)] published Thu Aug 20, 2009.
Read full Article »
Leave a Reply