Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes
Sang-Heon Han, Dong-Yul Lee, Sang-Jun Lee, Chu-Young Cho, Min-Ki Kwon et al.
The effect of an electron blocking layer (EBL) on the efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) is investigated. At low current density, the LEDs with a p-AlGaN EBL show a higher external quantum efficiency (EQE) than LEDs without an EBL. However, the EQE of LE ... [Appl. Phys. Lett. 94, 231123 (2009)] published Fri Jun 12, 2009.
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The effect of an electron blocking layer (EBL) on the efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) is investigated. At low current density, the LEDs with a p-AlGaN EBL show a higher external quantum efficiency (EQE) than LEDs without an EBL. However, the EQE of LE ... [Appl. Phys. Lett. 94, 231123 (2009)] published Fri Jun 12, 2009.
Read full Article »
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