Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes
Sang-Heon Han, Chu-Young Cho, Sang-Jun Lee, Tae-Young Park, Tae-Hun Kim et al.
We report on Mg doping in the barrier layers of InGaN/GaN multiple quantum wells (MQWs) and its effect on the properties of light-emitting diodes (LEDs). Mg doping in the barriers of MQWs enhances photoluminescence intensity, thermal stability, and internal quantum efficiency of LEDs. The light outp ... [Appl. Phys. Lett. 96, 051113 (2010)] published Wed Feb 3, 2010.
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We report on Mg doping in the barrier layers of InGaN/GaN multiple quantum wells (MQWs) and its effect on the properties of light-emitting diodes (LEDs). Mg doping in the barriers of MQWs enhances photoluminescence intensity, thermal stability, and internal quantum efficiency of LEDs. The light outp ... [Appl. Phys. Lett. 96, 051113 (2010)] published Wed Feb 3, 2010.
Read full Article »
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