Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks
M. Peralvarez, Josep Carreras, J. Barreto, A. Morales, C. Dominguez et al.
We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long lifetime. The power efficiency is enhanced up to ~0.1% by the presence of a silicon nitride control ... [Appl. Phys. Lett. 92, 241104 (2008)] published Tue Jun 17, 2008.
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We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long lifetime. The power efficiency is enhanced up to ~0.1% by the presence of a silicon nitride control ... [Appl. Phys. Lett. 92, 241104 (2008)] published Tue Jun 17, 2008.
Read full Article »
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