Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer
Sun-Kyung Kim, Hyun Kyong Cho, Duk Kyu Bae, Jeong Soo Lee, Hong-Gyu Park et al.
We demonstrate the enhancement of light extraction from a wide-area (500 x 500 [mu]m) GaN slab light-emitting diode (LED) that results from covering it with a TiO-patterned layer. To fabricate this device, a Cu supporter is electroplated onto the p-GaN face followed by detaching the sapphire substr ... [Appl. Phys. Lett. 92, 241118 (2008)] published Thu Jun 19, 2008.
Read full Article »
We demonstrate the enhancement of light extraction from a wide-area (500 x 500 [mu]m) GaN slab light-emitting diode (LED) that results from covering it with a TiO-patterned layer. To fabricate this device, a Cu supporter is electroplated onto the p-GaN face followed by detaching the sapphire substr ... [Appl. Phys. Lett. 92, 241118 (2008)] published Thu Jun 19, 2008.
Read full Article »
Leave a Reply