Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities
A. A. Khalifa, A. P. D. Love, D. N. Krizhanovskii, M. S. Skolnick, and J. S. Roberts
The authors report the observation of electroluminescence from GaAs-based semiconductor microcavities in the strong coupling regime. At low current densities, the emission consists of two peaks, which exhibit anticrossing behavior as a function of detection angle and thus originate from polariton st ... [Appl. Phys. Lett. 92, 061107 (2008)] published Wed Feb 13, 2008.
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The authors report the observation of electroluminescence from GaAs-based semiconductor microcavities in the strong coupling regime. At low current densities, the emission consists of two peaks, which exhibit anticrossing behavior as a function of detection angle and thus originate from polariton st ... [Appl. Phys. Lett. 92, 061107 (2008)] published Wed Feb 13, 2008.
Read full Article »
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