Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes
A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David
An experimental investigation into impact ionization in InAs photodiodes is presented. Photomultiplication measurements on p-i-n and n-i-p diodes show that while high avalanche gains can be obtained for electron initiated multiplication, there is virtually no gain with hole initiated multiplication. ... [Appl. Phys. Lett. 93, 111107 (2008)] published Mon Sep 15, 2008.
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An experimental investigation into impact ionization in InAs photodiodes is presented. Photomultiplication measurements on p-i-n and n-i-p diodes show that while high avalanche gains can be obtained for electron initiated multiplication, there is virtually no gain with hole initiated multiplication. ... [Appl. Phys. Lett. 93, 111107 (2008)] published Mon Sep 15, 2008.
Read full Article »
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