Enhanced characteristics of blue InGaN/GaN light-emitting diodes by using selective activation to modulate the lateral current spreading length
Ray-Ming Lin, Yuan-Chieh Lu, Yi-Lun Chou, Guo-Hsing Chen, Yung-Hsiang Lin et al.
We have studied the characteristics of blue InGaN/GaN multiquantum-well light-emitting diodes (LEDs) after reducing the length of the lateral current path through the transparent layer through formation of a peripheral high-resistance current-blocking region in the Mg-doped GaN layer. To study the m ... [Appl. Phys. Lett. 92, 261105 (2008)] published Tue Jul 1, 2008.
Read full Article »
We have studied the characteristics of blue InGaN/GaN multiquantum-well light-emitting diodes (LEDs) after reducing the length of the lateral current path through the transparent layer through formation of a peripheral high-resistance current-blocking region in the Mg-doped GaN layer. To study the m ... [Appl. Phys. Lett. 92, 261105 (2008)] published Tue Jul 1, 2008.
Read full Article »
Leave a Reply