Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping
Di Zhu (朱迪), Ahmed N. Noemaun, Martin F. Schubert, Jaehee Cho, E. Fred Schubert et al.
The confinement of electrons to the active region of GaInN light-emitting diodes (LEDs) is limited by the (i) inefficient electron capture into polar quantum wells, (ii) electron-attracting properties of electron-blocking layers (EBL), (iii) asymmetry in electron and hole transport, and (iv) unfavor ... [Appl. Phys. Lett. 96, 121110 (2010)] published Thu Mar 25, 2010.
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The confinement of electrons to the active region of GaInN light-emitting diodes (LEDs) is limited by the (i) inefficient electron capture into polar quantum wells, (ii) electron-attracting properties of electron-blocking layers (EBL), (iii) asymmetry in electron and hole transport, and (iv) unfavor ... [Appl. Phys. Lett. 96, 121110 (2010)] published Thu Mar 25, 2010.
Read full Article »
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