Enhanced emission efficiency of GaN/InGaN multiple quantum well light-emitting diode with an embedded photonic crystal
Min-Ki Kwon, Ja-Yeon Kim, Il-Kyu Park, Ki Seok Kim, Gun-Young Jung et al.
A photonic crystal (PC) structure of periodic SiO pillar cubic array is embedded in n-GaN layer of InGaN/GaN multiple quantum well (MQW) blue (480 nm) light-emitting diode (LED). The diameter, period, and depth of SiO pillar are 1246, 23010, and 13010 nm, respectively. The increments of 70% for ex ... [Appl. Phys. Lett. 92, 251110 (2008)] published Thu Jun 26, 2008.
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A photonic crystal (PC) structure of periodic SiO pillar cubic array is embedded in n-GaN layer of InGaN/GaN multiple quantum well (MQW) blue (480 nm) light-emitting diode (LED). The diameter, period, and depth of SiO pillar are 1246, 23010, and 13010 nm, respectively. The increments of 70% for ex ... [Appl. Phys. Lett. 92, 251110 (2008)] published Thu Jun 26, 2008.
Read full Article »
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