Enhanced optical power and low forward voltage of GaN-based light-emitting diodes with Ga-doped ZnO transparent conducting layer
Tae-Young Park, Yong-Seok Choi, Jang-Won Kang, Jae-Ho Jeong, Seong-Ju Park et al.
Ga-doped ZnO (ZnO:Ga) films were grown by metalorganic chemical vapor deposition as transparent conducting layers for GaN light-emitting diodes (LEDs). The forward voltage of LEDs with ZnO:Ga was 3.3 V at 20 mA. The low forward voltage was attributed to the removal of a resistive ZnGaO phase, decrea ... [Appl. Phys. Lett. 96, 051124 (2010)] published Fri Feb 5, 2010.
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Ga-doped ZnO (ZnO:Ga) films were grown by metalorganic chemical vapor deposition as transparent conducting layers for GaN light-emitting diodes (LEDs). The forward voltage of LEDs with ZnO:Ga was 3.3 V at 20 mA. The low forward voltage was attributed to the removal of a resistive ZnGaO phase, decrea ... [Appl. Phys. Lett. 96, 051124 (2010)] published Fri Feb 5, 2010.
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