Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment
Hung-Cheng Lin, Ruo-Syuan Lin, and Jen-Inn Chyi
This work demonstrates the effectiveness of using trimethylindium (TMIn) treatment to improve the luminescence efficiency of InGaN/GaN quantum wells grown by metal-organic vapor-phase epitaxy. Photoluminescence, x-ray diffraction, atomic force microscopy, and high-resolution transmission electron mi ... [Appl. Phys. Lett. 92, 161113 (2008)] published Fri Apr 25, 2008.
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This work demonstrates the effectiveness of using trimethylindium (TMIn) treatment to improve the luminescence efficiency of InGaN/GaN quantum wells grown by metal-organic vapor-phase epitaxy. Photoluminescence, x-ray diffraction, atomic force microscopy, and high-resolution transmission electron mi ... [Appl. Phys. Lett. 92, 161113 (2008)] published Fri Apr 25, 2008.
Read full Article »
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