Epitaxially grown n-ZnO/MgO/TiN/n[sup +]-Si(111) heterostructured light-emitting diode
X. W. Sun, J. L. Zhao, S. T. Tan, L. H. Tan, C. H. Tung et al.
Epitaxial n-ZnO/MgO/TiN/n-Si heterostructured light-emitting diodes have been fabricated. The epitaxial growth of MgO/TiN on Si(111) was established by pulsed laser deposition, which was further employed as a buffer layer for epitaxial growth of ZnO layer by metal-organic chemical-vapor deposition. ... [Appl. Phys. Lett. 92, 111113 (2008)] published Fri Mar 21, 2008.
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Epitaxial n-ZnO/MgO/TiN/n-Si heterostructured light-emitting diodes have been fabricated. The epitaxial growth of MgO/TiN on Si(111) was established by pulsed laser deposition, which was further employed as a buffer layer for epitaxial growth of ZnO layer by metal-organic chemical-vapor deposition. ... [Appl. Phys. Lett. 92, 111113 (2008)] published Fri Mar 21, 2008.
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