Estimating threshold reduction for spin-injected semiconductor lasers
I. Vurgaftman, M. Holub, B. T. Jonker, and J. R. Meyer
The magnitude of threshold reduction in a semiconductor laser with electron spin injection is shown to depend on such intrinsic properties of the active region as the dominant recombination mechanism, the ratio of hole-to-electron densities of states, the active-region doping, and the available mate ... [Appl. Phys. Lett. 93, 031102 (2008)] published Mon Jul 21, 2008.
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The magnitude of threshold reduction in a semiconductor laser with electron spin injection is shown to depend on such intrinsic properties of the active region as the dominant recombination mechanism, the ratio of hole-to-electron densities of states, the active-region doping, and the available mate ... [Appl. Phys. Lett. 93, 031102 (2008)] published Mon Jul 21, 2008.
Read full Article »
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