Extending the nanocluster-Si/erbium sensitization distance in Er-doped silicon nitride: The role of ErEr energy migration
In Yong Kim, Jung H. Shin, and Kyung Joong Kim
The nanocluster-Si (nc-Si)/Er interaction distance in Er-doped silicon nitride is investigated using SiO/SiN:Er/SiN/SiN:Er multilayers. The composition and thickness of SiO layers were fixed to provide constant sensitization, while the thickness of SiN:Er layers was varied to probe distance-dependen ... [Appl. Phys. Lett. 95, 221101 (2009)] published Mon Nov 30, 2009.
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The nanocluster-Si (nc-Si)/Er interaction distance in Er-doped silicon nitride is investigated using SiO/SiN:Er/SiN/SiN:Er multilayers. The composition and thickness of SiO layers were fixed to provide constant sensitization, while the thickness of SiN:Er layers was varied to probe distance-dependen ... [Appl. Phys. Lett. 95, 221101 (2009)] published Mon Nov 30, 2009.
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