GaN nanostructured p-i-n photodiodes
J. L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi
We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ~200 nm diameter and 520 nm tall nanopillars on a 1 [mu]m period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of ... [Appl. Phys. Lett. 93, 221104 (2008)] published Mon Dec 1, 2008.
Read full Article »
We report the fabrication of nanostructured p-i-n photodiodes based on GaN. Each device comprises arrays of ~200 nm diameter and 520 nm tall nanopillars on a 1 [mu]m period, fabricated by e-beam lithography. Strong rectifying behavior was obtained with an average reverse current per nanopillar of ... [Appl. Phys. Lett. 93, 221104 (2008)] published Mon Dec 1, 2008.
Read full Article »
Leave a Reply