Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates
E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, and M. Razeghi
GaN avalanche photodiodes (APDs) were grown on both conventional sapphire and low dislocation density free-standing (FS) c-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. At a reverse-bias of 70 V, APDs grown on sapphire substra ... [Appl. Phys. Lett. 96, 261107 (2010)] published Thu Jul 1, 2010.
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GaN avalanche photodiodes (APDs) were grown on both conventional sapphire and low dislocation density free-standing (FS) c-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. At a reverse-bias of 70 V, APDs grown on sapphire substra ... [Appl. Phys. Lett. 96, 261107 (2010)] published Thu Jul 1, 2010.
Read full Article »
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