Green light emitting diodes on a-plane GaN bulk substrates
Theeradetch Detchprohm, Mingwei Zhu, Yufeng Li, Yong Xia, Christian Wetzel et al.
We report the development of 520540 nm green light emitting diodes (LEDs) grown along the nonpolar a axis of GaN. GaInN/GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crys ... [Appl. Phys. Lett. 92, 241109 (2008)] published Tue Jun 17, 2008.
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We report the development of 520540 nm green light emitting diodes (LEDs) grown along the nonpolar a axis of GaN. GaInN/GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crys ... [Appl. Phys. Lett. 92, 241109 (2008)] published Tue Jun 17, 2008.
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