High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes
Seoung-Hwan Park, Doyeol Ahn, and Jong-Wook Kim
Optical properties of staggered 530 nm InGaN/InGaN/GaN quantum-well (QW) light-emitting-diodes are investigated using the multiband effective mass theory. These results are compared with those of conventional 530 nm InGaN/GaN QW structures. A staggered InGaN/InGaN/GaN QW structure is shown to have m ... [Appl. Phys. Lett. 94, 041109 (2009)] published Tue Jan 27, 2009.
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Optical properties of staggered 530 nm InGaN/InGaN/GaN quantum-well (QW) light-emitting-diodes are investigated using the multiband effective mass theory. These results are compared with those of conventional 530 nm InGaN/GaN QW structures. A staggered InGaN/InGaN/GaN QW structure is shown to have m ... [Appl. Phys. Lett. 94, 041109 (2009)] published Tue Jan 27, 2009.
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