High performance of GaN thin films grown on sapphire substrates coated with a silica-submicron-sphere monolayer film
Kazumasa Ueda, Yoshihiko Tsuchida, Nobuhiro Hagura, Ferry Iskandar, Kikuo Okuyama et al.
A high-performance, GaN-based light emitting diode (LED) was prepared using a metal organic chemical vapor deposition method on a silica-sphere, monolayer-coated sapphire substrate. Various surface coverage ratios of the silica submicron spheres with diameters ranging from 300 to 550 nm were depo ... [Appl. Phys. Lett. 92, 101101 (2008)] published Mon Mar 10, 2008.
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A high-performance, GaN-based light emitting diode (LED) was prepared using a metal organic chemical vapor deposition method on a silica-sphere, monolayer-coated sapphire substrate. Various surface coverage ratios of the silica submicron spheres with diameters ranging from 300 to 550 nm were depo ... [Appl. Phys. Lett. 92, 101101 (2008)] published Mon Mar 10, 2008.
Read full Article »
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