High quantum efficiency back-illuminated GaN avalanche photodiodes
C. Bayram, J. L. Pau, R. McClintock, M. Razeghi, M. P. Ulmer et al.
Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n-layer. ... [Appl. Phys. Lett. 93, 211107 (2008)] published Wed Nov 26, 2008.
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Back-illuminated avalanche photodiodes (APDs) composed of heterojunctions of either p-GaN/i-GaN/n-AlGaN or p-GaN/i-GaN/n-GaN/n-AlGaN were fabricated on AlN templates. At low voltage, an external quantum efficiency of 57% at 352 nm with a bandpass response was achieved by using AlGaN in the n-layer. ... [Appl. Phys. Lett. 93, 211107 (2008)] published Wed Nov 26, 2008.
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