High quantum efficiency two color type-II InAs/GaSb n-i-p-p-i-n photodiodes
Pierre-Yves Delaunay, Binh-Minh Nguyen, Darin Hoffman, Andrew Hood, Edward Kwei-Wei Huang et al.
A n-i-p-p-i-n photodiode based on type-II InAs/GaSb superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and 10 [mu]m, presented quantum efficiencies (QEs) of 47% and 39% at 77 K. The devices can be operated as two diodes for s ... [Appl. Phys. Lett. 92, 111112 (2008)] published Fri Mar 21, 2008.
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A n-i-p-p-i-n photodiode based on type-II InAs/GaSb superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and 10 [mu]m, presented quantum efficiencies (QEs) of 47% and 39% at 77 K. The devices can be operated as two diodes for s ... [Appl. Phys. Lett. 92, 111112 (2008)] published Fri Mar 21, 2008.
Read full Article »
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