Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes
J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin et al.
n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhib ... [Appl. Phys. Lett. 96, 201102 (2010)] published Mon May 17, 2010.
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n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhib ... [Appl. Phys. Lett. 96, 201102 (2010)] published Mon May 17, 2010.
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