InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin et al.
Ballistic and quasiballistic electron transport across the active InGaN layer are shown to be responsible for electron overflow and electroluminescence efficiency droop at high current levels in InGaN light emitting diodes both experimentally and by first-order calculations. An InGaN staircase elect ... [Appl. Phys. Lett. 97, 031110 (2010)] published Tue Jul 20, 2010.
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Ballistic and quasiballistic electron transport across the active InGaN layer are shown to be responsible for electron overflow and electroluminescence efficiency droop at high current levels in InGaN light emitting diodes both experimentally and by first-order calculations. An InGaN staircase elect ... [Appl. Phys. Lett. 97, 031110 (2010)] published Tue Jul 20, 2010.
Read full Article »
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