Laser activation of dopants for nanowire devices on glass and plastic
Nipun Misra, Costas P. Grigoropoulos, David P. Stumbo, and Jeffrey N. Miller
We report postgrowth doping of silicon nanowires (SiNWs) through ion implantation and subsequent annealing with nanosecond pulsed laser light. The green laser annealing process allows for polarization selective localized heating and enables highly efficient activation of implanted boron and arsenic ... [Appl. Phys. Lett. 93, 121116 (2008)] published Fri Sep 26, 2008.
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We report postgrowth doping of silicon nanowires (SiNWs) through ion implantation and subsequent annealing with nanosecond pulsed laser light. The green laser annealing process allows for polarization selective localized heating and enables highly efficient activation of implanted boron and arsenic ... [Appl. Phys. Lett. 93, 121116 (2008)] published Fri Sep 26, 2008.
Read full Article »
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